论文标题
通过直接Förster-type能量传递和多步扩散，MOS2单层中激子的歼灭机制
Annihilation mechanism of excitons in a MoS2 monolayer through direct Förster-type energy transfer and multistep diffusion
论文作者
论文摘要
原子上的MOS2层是一个直接的带隙半导体，由于极端的量子限制和库仑相互作用的筛选减少，表现出强的电子孔相互作用，这导致在室温下形成稳定的激子。因此，MOS2单层的各种激子特性对于确定光质相互作用的强度极为重要，包括它们的辐射重组寿命和光电子反应。在本文中，我们报告了使用瞬时吸收光谱法对MOS2单层中各种类型激子的潜在歼灭机制进行全面研究。我们严格地证明，Förster型共振能量转移是A和B-脱离的主要歼灭机制，而多步扩散过程负责C- Exciton an灭，这得到了关键的科学证据的支持。
Atomically thin MoS2 layer is a direct bandgap semiconductor exhibiting strong electron-hole interaction due to the extreme quantum confinement and reduced screening of Coulomb interactions, which results in the formation of stable excitons at room temperature. Therefore, various excitonic properties of MoS2 monolayer are extremely important in determining the strength of light matter interactions including their radiative recombination lifetime and optoelectronic response. In this paper, we report a comprehensive study of the underlying annihilation mechanism of various types of exciton in MoS2 monolayer using the transient absorption spectroscopy. We rigorously demonstrate that the Förster-type resonance energy transfer is the main annihilation mechanism of A- and B-excitons while multistep diffusion process is responsible for C-exciton annihilation, which is supported by critical scientific evidence.
