论文标题
比较确定性旋转轨道扭矩磁化切换的两种不同机制
A comparison of two different mechanisms for deterministic spin orbit torque magnetization switching
论文作者
论文摘要
在本文中，我们通过对使用自旋轨道扭矩进行磁化切换的两种可能的机制进行分析，据报道，这些机制在实验中导致无现场的确定性切换。在这里，我们比较了由于各向异性方向的倾斜而与使用抗铁磁偏置场的使用，因此比较了无场磁化。在分析上获得的简单结果表明，偏置场不仅会导致磁化逆转，而且还会降低相应的能屏障。基于宏生模型分析了磁化开关所需的临界电流。结果表明，尽管由各向异性的倾斜引起的无现场确定性切换比在内存元素的开发中比偏置字段更强大，但是在为特定应用程序选择参数时，必须在要求之间妥协。
In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrospin model. It is shown that although the field-free deterministic switching caused by a tilt of the anisotropy is more robust than the bias field in the development of memory elements, a compromise between requirements has to be adopted when selecting the parameters for specific applications.
