论文标题
来自暗物质散射的等离子生产
Plasmon production from dark matter scattering
论文作者
论文摘要
我们提出了半导体中等离子体产生的速率的第一个计算，该核反应对暗物质的反应。该过程类似于横向光子模式的bremsstrahlung，但纵向等离子体模式发出。对于10 MeV-1 GEV质量范围的暗物质，我们发现等离子体BREMSSTRAHLUNG速率比弹性散射小4-5个数量级，但比横向BREMSSTRAHLUNG速率大4-5个数量级。由于等离子可以腐烂到电子激发中，并且具有由等离子频率$ω_p$给出的特征能量，而Si Crystals中的$ω_p\ y约16 $ eV，因此，等离子体的生产提供了一种独特的签名和新方法，可检测来自Sub-Gev暗物质的核后备力。
We present a first calculation of the rate for plasmon production in semiconductors from nuclei recoiling against dark matter. The process is analogous to bremsstrahlung of transverse photon modes, but with a longitudinal plasmon mode emitted instead. For dark matter in the 10 MeV - 1 GeV mass range, we find that the plasmon bremsstrahlung rate is 4-5 orders of magnitude smaller than that for elastic scattering, but 4-5 orders of magnitude larger than the transverse bremsstrahlung rate. Because the plasmon can decay into electronic excitations and has characteristic energy given by the plasma frequency $ω_p$, with $ω_p \approx 16$ eV in Si crystals, plasmon production provides a distinctive signature and new method to detect nuclear recoils from sub-GeV dark matter.
